Two concerns about NBTI issue: gate dielectric scaling and increasing gate current

This publication has 8 references indexed in Scilit:

• Experimental evidence for the generation of bulk traps by negative bias temperature stress and their impact on the integrity of direct-tunneling gate dielectrics
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2004
• Negative bias temperature instability of pMOSFETs with ultra-thin SiON gate dielectrics
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• NBTI mechanism in ultra-thin gate dielectric - nitrogen-originated mechanism in SiON
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• An ultra-thin silicon nitride gate dielectric with oxygen-enriched interface (OI-SiN) for CMOS with EOT of 0.9 nm and beyond
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems
  Applied Physics Letters, 2003
• NBTI-channel hot carrier effects in PMOSFETs in advanced CMOS technologies
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Analytical quantum mechanical model for accumulation capacitance of MOS structures
  IEEE Electron Device Letters, 2002
• Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices
  Journal of Applied Physics, 1977