Slow-trap profiling of NO and N2O nitrided oxides grown on Si and SiC substrates
- 1 April 1999
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 39 (4) , 441-449
- https://doi.org/10.1016/s0026-2714(99)00022-0
Abstract
No abstract availableKeywords
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