Advances in SiC materials and devices: an industrial point of view
- 29 July 1999
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 61-62, 9-17
- https://doi.org/10.1016/s0921-5107(98)00438-3
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Recent application of silicon carbide to high power microwavePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's)IEEE Electron Device Letters, 1997
- Physical Vapor Transport Growth and Properties of SiC Monocrystals of 4H PolytypePhysica Status Solidi (b), 1997
- Semi-insulating 6H–SiC grown by physical vapor transportApplied Physics Letters, 1995
- Large diameter 6H-SiC for microwave device applicationsJournal of Crystal Growth, 1994
- Conductivity Anisotropy in Epitaxial 6H and 4H SicMRS Proceedings, 1994
- Chemical vapor deposition and characterization of undoped and nitrogen-doped single crystalline 6H-SiCJournal of Applied Physics, 1992
- Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafersApplied Physics Letters, 1990
- A new versatile, large size MOVPE reactorJournal of Crystal Growth, 1988
- Investigation of growth processes of ingots of silicon carbide single crystalsJournal of Crystal Growth, 1978