Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment
- 23 January 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (4) , 332-334
- https://doi.org/10.1063/1.100961
Abstract
The Fermi level at the Ga oxide/GaAs interface has been unpinned by rf plasma cleaning the GaAs surface in H2 and N2. Following plasma cleaning, a Ga oxide film is reactively electron beam deposited onto the substrate. Metal-oxide-semiconductor (MOS) capacitors fabricated on these structures show good high-frequency capacitance-voltage characteristics. This indicates that the density of interface states has been reduced to ∼1011 eV−1 cm−2. The MOS capacitors are found to be stable in air after several months.Keywords
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