Plasma Passivation Scheme for III–V Compound Semiconductor Surfaces
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Characteristics of the low-temperature-deposited SiO2-Ga0.47In0.53As metal/insulator/semiconductor interfaceThin Solid Films, 1984
- Influence of interfacial structure on the electronic properties of SiO2/InP MISFET’sJournal of Vacuum Science & Technology B, 1984
- The effects of plasma and ion beam processing on the properties of n-GaAs Schottky diodesVacuum, 1984
- Photoemission studies of molecular beam epitaxially grown GaAs (001) surfaces exposed to a nitrogen plasmaJournal of Applied Physics, 1983
- Ion-cleaning damage in (100) GaAs, and its effect on schottky diodesSolid-State Electronics, 1983
- Improvements in GaAs/plasma-deposited silicon nitride interface quality by predeposition GaAs surface treatment and postdeposition annealingJournal of Vacuum Science and Technology, 1982
- Plasma anodisation of Ga
1−
x
In
x
As ( x =0.35 and 0.10) and study of MOS interface propertiesElectronics Letters, 1982
- Silicon-nitride–gallium-arsenide MIS structures produced by plasma enhanced depositionJournal of Applied Physics, 1981
- Interfacial Reactions in Plasma‐Grown Native Oxide ‐ GaAs StructuresJournal of the Electrochemical Society, 1980
- Oxidation of GaAs in an oxygen multipole plasmaThin Solid Films, 1980