Metalorganic chemical vapor deposition of oriented ZnO films over large areas
- 15 December 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (12) , 1108-1110
- https://doi.org/10.1063/1.94243
Abstract
A metalorganic chemical vapor deposition process for preparing c‐axis‐oriented ZnO films in a simple system of the type commercially available for SiO2 deposition is described. The resulting layers are highly uniform in thickness and adhere to a variety of substrates. Film properties and structure are described briefly.Keywords
This publication has 11 references indexed in Scilit:
- An Open‐Tube Method for Diffusion of Zinc into GaAsJournal of the Electrochemical Society, 1982
- Properties of zinc oxide films prepared by the oxidation of diethyl zincJournal of Applied Physics, 1981
- Scattering loss reduction in ZnO optical waveguides by laser annealingApplied Physics Letters, 1981
- Highly oriented zinc oxide films grown by the oxidation of diethylzincApplied Physics Letters, 1980
- Growth of Epitaxial ZnO Thin Films by Organometallic Chemical Vapor DepositionJournal of the Electrochemical Society, 1980
- Open tube diffusion of zinc in gallium arsenideIEEE Electron Device Letters, 1980
- Zinc-oxide thin-film surface-wave transducersProceedings of the IEEE, 1976
- Theory of interdigital couplers on nonpiezoelectric substratesJournal of Applied Physics, 1973
- Chemical Vapor Deposition of Silicate Glasses for Use with Silicon DevicesJournal of the Electrochemical Society, 1970
- Piezoelectricity and Conductivity in ZnO and CdSPhysical Review Letters, 1960