Electroreflectance of GaAs-AlGaAs modulation-doped field-effect transistors
- 15 July 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (2) , 163-165
- https://doi.org/10.1063/1.96249
Abstract
We report the measurements of changes in the reflectivity spectrum of GaAs-AlGaAs modulation-doped field-effect transistors near the band gaps of both materials when a gate voltage is applied to vary the charge density at the interface. The observed changes (up to 0.3% at the band edge of AlGaAs) are attributed to the high external fields (∼105 V/cm) which modulate the already existing band bending, leading to changes in the band-edge absorption due to Franz–Keldysh effects in the quantum-confined structures. The possibility of using the effect for optical readout of transistor action is discussed.Keywords
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