Effect of impurities on the thermal oxidation process in InP
- 5 March 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (10) , 919-921
- https://doi.org/10.1063/1.103325
Abstract
Sulfur (n‐type) and zinc (p‐type) doped and undoped InP have been thermally oxidized in the temperature range 400 °C≤T≤600 °C. The Raman scattering and Auger electron spectroscopy techniques show that the doping enhances the formation of the crystalline InPO4 phase and favors the growth of crystalline phosphorus at the oxide/InP interface.Keywords
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