Simulation toolbox and material parameter data base for CMOS MEMS

Abstract
The CMOS MEMS CAD tools SOLIDIS and ICMAT are presented. The data base ICMAT is obtained from measuring process dependent CMOS thin film electrical, magnetic, thermal, and mechanical properties by using dedicated materials characterization microstructures. ICMAT is illustrated by thermophysical and mechanical properties of various CMOS layers and novel characterization structures for the thermopower of CMOS polysilicon and the heat capacity of CMOS layer sandwiches. The toolbox SOLIDIS provides coupled numerical modeling of the electrical, magnetic, and mechanical phenomena, and the boundary and interface conditions occurring in Microsystem Technology Computer Aided Design, or /spl mu/TCAD, in a uniform and consistent environment. An outline of /spl mu/TCAD and MEMS device simulation is given with a magnetic sensor and a deflectable micromirror serving as examples.

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