A study of thermal oxide-InP interaces
- 2 October 1987
- journal article
- Published by Elsevier in Surface Science
- Vol. 189-190, 353-361
- https://doi.org/10.1016/s0039-6028(87)80453-3
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- On the nature of oxides on InP surfacesJournal of Vacuum Science & Technology A, 1985
- High pressure thermal oxide/InP interfaceJournal of Vacuum Science & Technology B, 1985
- Composition and structure of thermal oxides of indium phosphideJournal of Applied Physics, 1983
- Estimation of the band gap of InPO4Applied Physics Letters, 1983
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- The In‐P‐O Phase Diagram: Construction and ApplicationsJournal of the Electrochemical Society, 1982
- Raman scattering study of the thermal oxidation of InPApplied Physics Letters, 1980
- Thermal oxidation of InPJournal of Applied Physics, 1980
- Analysis of the oxide/semiconductor interface using Auger and ESCA as applied to InP and GaAsJournal of Vacuum Science and Technology, 1978