MOVPE growth of AlGaInAs–InP highly tensile-strained MQWs for 1.3μm low-threshold lasers
- 12 October 2004
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 272 (1-4) , 543-548
- https://doi.org/10.1016/j.jcrysgro.2004.08.032
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- 10 Gbit/s transmitter based on directly modulated InGaAlAs laser operating up to 126°CElectronics Letters, 2003
- Analysis of the performance of 1.55-μm InGaAs-InP tensile strained quantum-well lasersIEEE Journal of Quantum Electronics, 1999
- Tensile-strained GaInAsP-InP quantum-well lasers emitting at 1.3 μmIEEE Journal of Quantum Electronics, 1996
- High speed, ultralow noise, tensile strained InGaAlAsMQWlasers emitting at 1300 nm for optical communication andmicrowave applicationsElectronics Letters, 1994
- Theoretical analysis of pure effects of strain and quantum confinement on differential gain in InGaAsP/lnP strained-layer quantum-well lasersIEEE Journal of Quantum Electronics, 1994
- Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiersIEEE Journal of Quantum Electronics, 1994
- Comparative study of low-threshold 1.3 mu m strained and lattice-matched quantum-well lasersIEEE Photonics Technology Letters, 1993
- Low threshold 1.3 μm strained-layer Al
x
Ga
y
In
1−
x
−
y
As quantum well lasersElectronics Letters, 1992
- Improved performance due to suppression of spontaneous emission in tensile-strain semiconductor lasersElectronics Letters, 1991
- Low threshold 1.5 μm tensile-strained single quantum well lasersElectronics Letters, 1991