77 K versus 300 K operation: the quasi-saturation behavior of a DMOS device and its fully analytical model
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (9) , 1636-1644
- https://doi.org/10.1109/16.231569
Abstract
No abstract availableKeywords
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