An InAlAs/InAs MODFET
- 1 December 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (12) , 707-709
- https://doi.org/10.1109/55.116963
Abstract
An InAs modulation-doped field-effect transistor (MODFET) using an epitaxial heterostructure based entirely on arsenides is reported. The heterostructure was grown by MBE on InP and contains a 30-AA InAs channel. A 2- mu m-gate-length device displays well-behaved characteristics, showing sharp pinch-off (V/sub th/=0.8 V) and small output conductance (5 mS/mm) at 300 K. The maximum transconductance is 170 mS mm with a maximum drain current of 312 mA/mm. Strong channel quantization results in a breakdown voltage of -9.6 V, a severalfold improvement over previous InAs MODFETs based on antimonides. Low-temperature magnetic field measurements show strong Shubnikov-de Haas oscillations which, over a certain range of gate voltage, strongly indicate that the electron channel resides in the InAs layer.Keywords
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