A correlation between surface morphology and RHEED intensity variation for growth of GaAs by molecular beam epitaxy
- 2 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 112 (1) , 14-26
- https://doi.org/10.1016/0022-0248(91)90907-m
Abstract
No abstract availableKeywords
This publication has 32 references indexed in Scilit:
- Real-Time Observation of GaAs(001) Surfaces During Molecular Beam Epitaxy by Scanning Microprobe Reflection High Energy Electron DiffractionJapanese Journal of Applied Physics, 1988
- Reflection high energy electron diffraction measurement of surface diffusion during the growth of gallium arsenide by MBEJournal of Crystal Growth, 1987
- RHEED oscillation study by modulated electron beam during GaAs growthJournal of Crystal Growth, 1987
- Application de la technique des oscillations d'intensité de diffraction électronique en incidence rasante à la croissance des semi-conducteurs III-V par épitaxie par jets moléculairesRevue de Physique Appliquée, 1987
- Optimal surface and growth front of III–V semiconductors in molecular beam epitaxy: A study of kinetic processes via reflection high energy electron diffraction specular beam intensity measurements on GaAs(100)Journal of Vacuum Science & Technology B, 1986
- Existence of metastable step density distributions on GaAs(100) surfaces and their consequence for molecular beam epitaxial growthApplied Physics Letters, 1986
- Reflection high energy electron diffraction intensity behavior during homoepitaxial molecular beam epitaxy growth of GaAs and implications for growth kinetics and mechanismsJournal of Vacuum Science & Technology B, 1985
- Role of surface kinetics and interrupted growth during molecular beam epitaxial growth of normal and inverted GaAs/AlGaAs(100) interfaces: A reflection high-energy electron diffraction intensity dynamics studyApplied Physics Letters, 1985
- Dynamic RHEED observations of the MBE growth of GaAsApplied Physics A, 1984
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983