Fermi-Level-Pinning Defects in Highlyn-Doped Silicon
- 15 December 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 79 (24) , 4834-4837
- https://doi.org/10.1103/physrevlett.79.4834
Abstract
Based on first-principles calculations and analysis of x-ray absorption measurements, an unconventional mechanism is proposed for the saturation of carriers in highly -doped Si. The mechanism is Fermi-level pinning from a new class of defect centers containing two separated but interacting dopant atoms with no associated Si vacancies. The number of such centers increases sharply at high doping levels. A simple model provides very good agreement with the maximum carrier concentrations observed in Si.
Keywords
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