Photoluminescence studies of Si implanted with In and/or Tl: The effects of thermal treatment and atomic H

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Abstract
We report photoluminescence studies of Si implanted with In and/or Tl, followed by various treatments. As‐implanted samples and those annealed at 300 °C in vacuum showed many well‐known damage‐related luminescence lines. Treatment at 300 °C in atomic H eliminated most of these lines, while causing only a broadening of the I3 line. We find that the efficient luminescence previously reported at 77 K in implanted, atomic H annealed Si is due to this perturbed I3 center. The H‐related increase in luminescence efficiency results from the passivation of competing recombination channels, and not from the creation of a new center. Samples heated to 1000 °C and cooled slowly show well‐resolved acceptor bound exciton lines, while those quenched from 1000 °C show very strong luminescence from the In‐ and/or Tl‐related isoelectronic bound excitons.