10 nm scale electron beam lithography using a triphenylene derivative as a negative/positive tone resist
- 12 August 1999
- journal article
- research article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 32 (16) , L75-L78
- https://doi.org/10.1088/0022-3727/32/16/102
Abstract
We show that the liquid crystal triphenylene derivative 2,3,6,7,10,11-hexapentyl-oxytriphenylene acts as a high-resolution electron beam resist. Using pentanol as a developer, positive behaviour was observed for electron doses greater than ~300µC cm-2 at 20 keV. At higher doses (>2.5 mC cm-2), the resist rapidly assumes negative tone behaviour. With the developer monochlorobenzene, only negative behaviour was observed, with a sensitivity of ~2.5 mC cm-2 at 20 keV. The resist allows relatively facile definition of 14 nm patterns (negative tone) with a 30 keV electron beam and without the need for any complex pre-irradiation preparation or post-irradiation processing of the resist.Keywords
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