High power and high speed InP DHBT driver IC's for laser modulation
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 33 (9) , 1411-1416
- https://doi.org/10.1109/4.711340
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- A double InGaAs/InP HBT technology for lightwave communication circuits designPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 12 Gb/s laser and optical modulator driver circuit with InGaAs/InP double heterostructure bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Five AlGaAs/GaAs HBT ICs for a 20 Gb/s optical repeaterPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 20 Gbit/s transimpedance preamplifier and modulatordriver in SiGe bipolar technologyElectronics Letters, 1997
- High power modulator driver ICs up to 30 Gb/s with AlGaAs/GaAs HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1997
- InP-HBT chip-set for 40-Gb/s fiber optical communication systems operational at 3 VIEEE Journal of Solid-State Circuits, 1997
- A versatile Si-bipolar driver circuit with high output voltage swing for external and direct laser modulation in 10 Gb/s optical-fiber linksIEEE Journal of Solid-State Circuits, 1994
- Analyzing ECL's noise marginIEEE Circuits and Devices Magazine, 1994
- Influence of transmission-line interconnections between gigabit-per-second ICs on time jitter and instabilitiesIEEE Journal of Solid-State Circuits, 1990
- Accurate analytical delay expressions for ECL and CML circuits and their applications to optimizing high-speed bipolar circuitsIEEE Journal of Solid-State Circuits, 1990