Growth and modeling of cw-UV induced oxidation of silicon
- 1 January 1994
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 75 (1) , 227-231
- https://doi.org/10.1063/1.355888
Abstract
A report on the use of a low pressure Hg discharge lamp to grow 100 Å SiO2 layers on Si at 550 °C. The induced reaction rate is more than 12 times that for thermal oxidation of Si at 612 °C, indicating that the growth mechanism is photonically controlled. We tentatively suggest that the induced oxidation is based on space‐charge controlled drift of ionic oxygen species created in the SiO2 by charge photoinjected from the Si. Simple modeling predicts a limiting thickness for film growth that is confirmed by experimental evidence. An activation energy of 0.56 eV extracted from the data compares with values of 0.14 – 0.7 eV previously reported for oxidation of silicon by O or O− species.This publication has 30 references indexed in Scilit:
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