Boron doping of SiGe base of heterobipolar transistors
- 1 January 1990
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 184 (1-2) , 163-170
- https://doi.org/10.1016/0040-6090(90)90410-f
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxyApplied Physics Letters, 1988
- p-type doping in Si molecular beam epitaxy by coevaporation of boronApplied Physics Letters, 1984