Suppression of boron penetration in BF/sub 2/-implanted p-type gate MOSFET by trapping of fluorines in amorphous gate

This publication has 23 references indexed in Scilit:

• Very lightly nitrided oxide gate MOSFETs for deep-sub-micron CMOS devices
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Effect of Oxygen Impurity on Microstructure and Boron Penetration in a BF 2 + Implanted LPCVD Stacked Amorphous Silicon p+ Gated PMOS Capacitor
  Journal of the Electrochemical Society, 1995
• Suppression of boron penetration in p/sup +/ polysilicon gate P-MOSFETs using low-temperature gate-oxide N/sub 2/O anneal
  IEEE Electron Device Letters, 1994
• Oxynitride gate dielectrics for p/sup +/-polysilicon gate MOS devices
  IEEE Electron Device Letters, 1993
• The effect of silicon gate microstructure and gate oxide process on threshold voltage instabilities in p/sup +/-gate p-channel MOSFETs with fluorine incorporation
  IEEE Transactions on Electron Devices, 1992
• A comprehensive study on p/sup +/ polysilicon-gate MOSFET's instability with fluorine incorporation
  IEEE Transactions on Electron Devices, 1990
• The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices
  IEEE Transactions on Electron Devices, 1990
• Surface Roughness and Electrical Conduction of Oxide/Polysilicon Interfaces
  Journal of the Electrochemical Society, 1986
• Capture and tunnel emission of electrons by deep levels in ultrathin nitrided oxides on silicon
  Applied Physics Letters, 1984
• Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions
  Solid-State Electronics, 1966