Three-Dimensional Integrated Circuit Technology
- 1 January 1983
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Three-dimensional CMOS IC's Fabricated by using beam recrystallizationIEEE Electron Device Letters, 1983
- A dynamic RAM Cell in recrystallized polysiliconIEEE Electron Device Letters, 1983
- Use of selective annealing for growing very large grain silicon on insulator filmsApplied Physics Letters, 1982
- Stacked MOSFET's in a single film of laser-recrystallized PolySiliconIEEE Electron Device Letters, 1982
- Recrystallization of Si on amorphous substrates by doughnut-shaped cw Ar laser beamApplied Physics Letters, 1982
- A high density CMOS inverter with stacked transistorsIEEE Electron Device Letters, 1981
- One-gate-wide CMOS Inverter on laser-recrystallized polysiliconIEEE Electron Device Letters, 1980