Ion-Beam-Assisted Deposition of TiN Thin Films
- 1 August 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (8R)
- https://doi.org/10.1143/jjap.32.3414
Abstract
X-ray diffraction and transmission electron analyses are used to investigate changes in the microstructure that occur when TiN films are grown by sequential deposition and irradiation on unheated Si substrates. A N2-Ar gas mixture serves partly for the reactive sputter deposition of TiN from Ti in a rf magnetron target and partly for the generation of a broad ion beam in a Kaufman source. When analyzed in terms of a simple model, the data suggest the existence of a critical growth rate of two bilayers of TiN per deposition-irradiation cycle. Below that rate, the columnar growth microstructure changes into a granular one with azimuthal texture.Keywords
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