In situ stress measurements during the MOCVD growth of AlN buffer layers on (111) Si substrates
- 1 January 2004
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 261 (2-3) , 294-300
- https://doi.org/10.1016/j.jcrysgro.2003.11.020
Abstract
No abstract availableKeywords
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