Defect formation in implantation of crystalline Si by MeV Si ions
- 15 January 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (2) , 990-995
- https://doi.org/10.1063/1.345709
Abstract
The distributions of vacancy-type defects and displaced Si atoms in Si(100) produced by the room-temperature implantation of 1014–1016 12-MeV 28Si+ ions/cm2 are measured with low-energy positron- and ion-beam techniques. The observed damage regions are reproduced by computer simulations. The distribution of displaced Si atoms coincides with the deposited energy distribution in elastic collisions. At the fluence of 1×1016 Si+/cm2, no crystalline structure was found in the peak region of the deposited energy at the depth of z=6 μm. Saturation of the divacancy concentration was observed at the ion fluences 3×1015 Si+/cm2 close to the surface (z1 μm). In the region z1 μm. This is also found in the simulated spatial structure of collision cascades.This publication has 19 references indexed in Scilit:
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