Low Pressure MOCVD Growth and Characterization of GaAs and InP on Silicon Substrates
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
High quality GaAs and InP have been grown on silicon substrates, using low pressure metalorganic chemical vapor deposition technique. The growth temperature is 550°C and the growth rate 100 A/min.Photoluminescence, X-ray diffraction and electrochemical profiling verified the high quality of these layers. The use of superlattices as buffer layers, (GaAs/GaInP) in the case of GaAs/Si and (GaInAsP/InP) in the case of InP/Si, decreased the amount of misfit dislocations in the epitaxial layer. Carrier concentrations as low as 5.1015 cm−3 have been measured by electrochemical profiling.Keywords
This publication has 10 references indexed in Scilit:
- Photoluminescence studies of heteroepitaxial gaas on siJournal of Electronic Materials, 1988
- High-quality GaInAsP/InP heterostructures grown by low-pressure metalorganic chemical vapor deposition on silicon substratesApplied Physics Letters, 1988
- Stability of 300 K continuous operation of p-n AlxGa1−xAs-GaAs quantum well lasers grown on SiApplied Physics Letters, 1987
- Room-temperature continuous operation of p-n AlxGa1−xAs-GaAs quantum well heterostructure lasers grown on SiApplied Physics Letters, 1987
- Heteroepitaxial growth of InP directly on Si by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Epitaxial GaAs grown directly on (100)Si by low pressure MOVPE using low temperature processingJournal of Crystal Growth, 1986
- First observation of the two-dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Very low threshold buried ridge structure lasers emitting at 1.3 μm grown by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1985
- (Invited) Recent Progress in Semiconductor Laser Research and DevelopmentJapanese Journal of Applied Physics, 1980
- Si Bridging Epitaxy from Si Windows onto SiO2byQ-Switched Ruby Laser Pulse AnnealingJapanese Journal of Applied Physics, 1980