Analysis of the temperature dependence of hot-carrier-induced degradation in bipolar transistors for Bi-CMOS
- 1 June 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (6) , 978-987
- https://doi.org/10.1109/16.293311
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
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