Charge injection into SiO2 from reverse-biased junctions

This publication has 10 references indexed in Scilit:

• On the emitter degradation by avalanche breakdown in planar transistors
  Solid-State Electronics, 1971
• MEMORY BEHAVIOR IN A FLOATING-GATE AVALANCHE-INJECTION MOS (FAMOS) STRUCTURE
  Applied Physics Letters, 1971
• Electron gate currents and threshold stability in the n-channel stacked gate MOS tetrode
  IEEE Transactions on Electron Devices, 1971
• Avalanche degradation of h_FE
  IEEE Transactions on Electron Devices, 1970
• On the mechanism of hFE degradation by emitter-base reverse current stress
  Microelectronics Reliability, 1970
• Avalanche-induced 1/f noise in bipolar transistors
  IEEE Transactions on Electron Devices, 1970
• A new MNOS charge storage effect
  Solid-State Electronics, 1969
• AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SiO2
  Applied Physics Letters, 1969
• h_FEdegradation due to reverse bias emitter-base junction stress
  IEEE Transactions on Electron Devices, 1969
• EXCESS CURRENT GENERATION DUE TO REVERSE BIAS P-N JUNCTION STRESS
  Applied Physics Letters, 1968