Characterization of hot-carrier effects in thin-film fully-depleted SOI MOSFETs
- 1 January 1994
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Previous conflicting reports concerning fully-depleted SOI device hot electron reliability is partially due to misunderstanding over the maximum channel electric field (E/sub m/). Experimental results using SOI MOSFETs with body contacts indicate that E/sub m/ is just a weak function of thin-film SOI thickness (T/sub si/) and E/sub m/ can be significantly lower than in a bulk device with drain junction depth (X/sub j/) comparable to T/sub si/ The theoretical correlation between SOI MOSFET's gate current and substrate current are experimentally confirmed. This provides a means (I/sub G/) of studying E, in SOI device without body contacts. Both N- and P-MOSFETs can have better hot-carrier reliability than comparable bulk devices. Thin film SOI MOSFETs have better prospects for meeting breakdown voltage and hot-electron reliability requirements than previously thought.Keywords
This publication has 12 references indexed in Scilit:
- p-MOSFET gate current and device degradationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Hot electron gate current and degradation in P-channel SOI MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Hot-electron-induced degradation of front and back channels in partially and fully depleted SIMOX MOSFETsIEEE Electron Device Letters, 1992
- Hot-carrier effects in fully-depleted SOI nMOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992
- A CV technique for measuring thin SOI film thicknessIEEE Electron Device Letters, 1991
- SOI design for competitive CMOS VLSIIEEE Transactions on Electron Devices, 1990
- Hot-electron effects in Silicon-on-insulator n-channel MOSFET'sIEEE Transactions on Electron Devices, 1987
- Modeling of substrate current in p-MOSFET'sIEEE Electron Device Letters, 1987
- Dependence of channel electric field on device scalingIEEE Electron Device Letters, 1985
- Correlation between substrate and gate currents in MOSFET'sIEEE Transactions on Electron Devices, 1982