Growth of InAlAs/InGaAs and InGaAlAs/InGaAs heterojunction bipolar transistors on Si-implanted InP substrates by molecular beam epitaxy
- 1 March 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (5) , 2449-2451
- https://doi.org/10.1063/1.351108
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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