Temperature dependence of soft breakdown and wear-out in sub-3 nm SiO/sub 2/ films
- 7 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Explanation of soft and hard breakdown and its consequences for area scalingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Challenges for accurate reliability projections in the ultra-thin oxide regimePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Ultra-thin gate dielectrics: they break down, but do they fail?Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Oxide breakdown mechanism and quantum physical chemistry for time-dependent dielectric breakdownPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxidesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Investigation of temperature acceleration of thin oxide time-to-breakdownMicroelectronic Engineering, 1999
- Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide filmsApplied Physics Letters, 1999
- Soft breakdown in ultrathin gate oxides: Correlation with the percolation theory of nonlinear conductorsApplied Physics Letters, 1998
- Low electric field breakdown of thin SiO/sub 2/ films under static and dynamic stressIEEE Transactions on Electron Devices, 1997
- Current fluctuations and silicon oxide wear-out in metal-oxide-semiconductor tunnel diodesApplied Physics Letters, 1988