Low voltage electron beam lithography in PMMA
- 1 July 1999
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 17 (4) , 1366-1370
- https://doi.org/10.1116/1.590762
Abstract
We have studied low voltage (1–2 kV) electron beam lithography processes in PMMA and compared them to conventional high voltage processing. We looked at the deposited metal after liftoff as well as directly imaging resist profiles by atomic force microscopy. As expected, the proximity effects were greatly reduced. The forward scattering was found to increase at low voltage. The study of developed resist profiles showed that linewidth versus dose has a single Gaussian functional form, proving that forward scattering plays the major role in line broadening. The effective Gaussian linewidth is 60 nm at 1 kV in a 50 nm resist layer. Modeling of the lithographic process showed a significant increase in resolution and process latitude for thinner resists.Keywords
This publication has 11 references indexed in Scilit:
- High resolution electron beam lithography using ZEP-520 and KRS resists at low voltageJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Sub-10 nm lithography with self-assembled monolayersApplied Physics Letters, 1996
- Low-voltage electron-beam lithography with scanning tunneling microscopy in air: A new method for producing structures with high aspect ratiosJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- An electron-beam microcolumn with improved resolution, beam current, and stabilityJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Resists and processes for 1 kV electron beam microcolumn lithographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Reduction and elimination of proximity effectsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Low voltage alternative for electron beam lithographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Low voltage, high resolution studies of electron beam resist exposure and proximity effectJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Low Energy Electron Beam LithographyPublished by SPIE-Intl Soc Optical Eng ,1982
- Zur Theorie des Durchgangs schneller Korpuskularstrahlen durch MaterieAnnalen der Physik, 1930