Use of COTS microelectronics in radiation environments
- 1 December 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 46 (6) , 1494-1503
- https://doi.org/10.1109/23.819113
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- Observation of heavy ion induced transients in linear circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Emerging optocoupler issues with energetic particle-induced transients and permanent radiation degradationIEEE Transactions on Nuclear Science, 1998
- Emerging radiation hardness assurance (RHA) issues: a NASA approach for space flight programsIEEE Transactions on Nuclear Science, 1998
- Radiation effects in advanced microelectronics technologiesIEEE Transactions on Nuclear Science, 1998
- System hardening approaches for a LEO satellite with radiation tolerant partsIEEE Transactions on Nuclear Science, 1997
- Impact of technology trends on SEU in CMOS SRAMsIEEE Transactions on Nuclear Science, 1996
- Single event effect testing of the Intel 80386 family and the 80486 microprocessorIEEE Transactions on Nuclear Science, 1996
- Ion-induced sustained high current condition in a bipolar deviceIEEE Transactions on Nuclear Science, 1994
- SEU hardening of field programmable gate arrays (FPGAs) for space applications and device characterizationIEEE Transactions on Nuclear Science, 1994
- A Reevaluation of Worst-Case Postirradiation Response for Hardened MOS TransistorsIEEE Transactions on Nuclear Science, 1987