Layer Thickness Calculation of In1-xGaxAs for Diffusion-Limited Liquid-Phase Growth in a Temperature-Graded Solution with Source Material
- 1 December 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (12R)
- https://doi.org/10.1143/jjap.28.2561
Abstract
A theoretical model was proposed to calculate the layer thickness of a III-V ternary crystal for diffusion-limited growth in a temperature-graded ternary solution into which solute elements were continuously supplied from a source material. This model was applied to the layer thickness calculation of In1-x Ga x As in a temperature-graded In-Ga-As ternary solution with GaAs source material. It was studied by these calculation how the thickness of grown layers depends on growth parameters such as growth temperature, cooling rates of the substrate and the source material, solution length, and temperature difference between the substrate and the source material.Keywords
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