Recovery of hot-carrier damage in reoxidized nitrided oxide MOSFET's
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (1) , 38-40
- https://doi.org/10.1109/55.144944
Abstract
Recovery of channel hot-carrier damage in reoxidized nitrided oxide (RNO) n- and p-MOSFETs is examined. It is found that recovery is substantially greater in RNO versus conventional oxide (CO) devices, particularly for p-MOSFETs. The authors believe this recovery is due to the detrapping of electrons trapped in the nitridation-induced traps near the substrate interface. The more rapid recovery of the hot-carrier damage in RNO devices will produce greater circuit lifetime improvements over conventional oxides than predicted by accelerated static high-voltage tests.Keywords
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