Formation of 0.05- mu m p/sup +/-n and n/sup +/-p junctions by very low (<500 eV) ion implantation
- 1 May 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (5) , 250-252
- https://doi.org/10.1109/55.145043
Abstract
The current-voltage (I-V) characteristics of ultrashallow p/sup +/-n and n/sup +/-p diodes, obtained using very-low-energy (<500-eV) implantation of B and As, are presented. the p/sup +/-n junctions were formed by implanting B/sup +/ ions into n-type SiKeywords
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