Stranski-Krastanov Growth of Ni on Si(111) at Room Temperature
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- In-situ transmission electron microscopy of NiSi2 formation by molecular beam epitaxySurface Science, 1989
- NiSi mixing: A new model for low temperature silicide formationSurface Science, 1985
- Electronic properties on silicon-transition metal interface compoundsSurface Science Reports, 1985
- Structure and Nucleation Mechanism of Nickel Silicide on Si(111) Derived from Surface Extended-X-Ray-Absorption Fine StructurePhysical Review Letters, 1983
- Electronic structure of Ni and Pd alloys. III. Correlation effects in the Auger spectra of Ni alloysPhysical Review B, 1983
- Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiEpitaxial StructuresPhysical Review Letters, 1983
- Electronic structure of silicide-silicon interfacesThin Solid Films, 1982
- Stoichiometric and Structural Origin of Electronic States at theSi-Si InterfacePhysical Review Letters, 1981
- Application of Auger electron spectroscopy to studies of the silicon/silicide interfaceJournal of Vacuum Science and Technology, 1978
- Relative sensitivity factors for quantitative Auger analysis of binary alloysSurface Science, 1977