Activation efficiency improvement in Si-implanted GaAs by P co-implantation
- 1 June 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (22) , 1592-1594
- https://doi.org/10.1063/1.97790
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Role of boron in electrical properties of semi-insulating GaAs grown by the liquid encapsulated Czochralski methodApplied Physics Letters, 1987
- Electrical property improvements in In-doped dislocation-free GaAs by bulk annealingApplied Physics Letters, 1985
- The Role of Gallium Antisite Defect in Activation and Type-Conversion in Si Implanted GaAsJapanese Journal of Applied Physics, 1985
- Electrical uniformity for Si-implanted layer of completely dislocation-free and striation-free GaAsApplied Physics Letters, 1985
- Crystal growth of completely dislocation-free and striation-free GaAsJournal of Crystal Growth, 1985
- Effect of Dislocations on Sheet Carrier Concentration of Si-Implanted, Semi-Insulating, Liquid-Encapsulated Czochralski Grown GaAsJapanese Journal of Applied Physics, 1985
- Compensation in n-type GaAs resulting from nitrogen ion implantationJournal of Applied Physics, 1984
- Direct observation of dislocation effects on threshold voltage of a GaAs field-effect transistorApplied Physics Letters, 1983
- Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donorsApplied Physics Letters, 1982
- Ion implantation in compound semiconductors–an approach based on solid state theoryRadiation Effects, 1973