Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys
- 28 October 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (18) , 3728-3730
- https://doi.org/10.1063/1.1623320
Abstract
We have studied the optical properties of pseudo-alloy monolayer InAs/GaAsN superlattices with highly planar interfaces. In spite of the two-dimensional growth mode, we found that the photoluminescence (PL) reveals strong exciton localization through the whole PL band, dominating the spectrum up to high excitation densities and observation temperatures. Pump-and-probe PL experiments provide the following time constants: (a) the exciton relaxation time to the ground states of the localization regions is found to be ∼40–70 ps, depending on the photon energy, and (b) the time for depopulation of these localized states is between 2 and 4 ns.Keywords
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