Modeling the reverse base current phenomenon due to avalanche effect in advanced bipolar transistors
- 1 January 1990
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (10) , 2274-2276
- https://doi.org/10.1109/16.59921
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Avalanche multiplication in a compact bipolar transistor model for circuit simulationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Low-temperature avalanche multiplication in the collector-base junction of advanced n-p-n transistorsIEEE Transactions on Electron Devices, 1990
- An avalanche multiplication model for bipolar transistorsSolid-State Electronics, 1990
- Explosion of poly-silicide links in laser programmable redundancy for VLSI memory repairIEEE Transactions on Electron Devices, 1989
- Recombination current in forward-biased p-n junctionsIEEE Transactions on Electron Devices, 1988
- Modelling of minority-carrier transport in heavily doped silicon emittersSolid-State Electronics, 1987
- Modeling of avalanche generation current of bipolar junction transistors for computer circuit simulationIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1982
- High current regimes in transistor collector regionsIEEE Transactions on Electron Devices, 1973
- Measurement of the ionization rates in diffused silicon p-n junctionsSolid-State Electronics, 1970
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952