Structure, composition and electro-optical properties of n-type amorphous and microcrystalline silicon thin films
- 27 September 1997
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 76 (3) , 249-258
- https://doi.org/10.1080/01418639708241090
Abstract
This paper deals with the structure, composition and electro-optical characteristics of n-type amorphous and microcrystalline silicon thin films produced by plasma-enhanced chemical vapour deposition in a hydrogen-helium mixture. In addition, special emphasis is given to the role that hydrogen incorporation plays in the film's properties and in the characteristics of n-type microcrystalline films presenting simultaneously optical gaps of about 2–3 eV (controlled by the hydrogen content in the film), a dark conductivity of 6·5 S cm−1 and a Hall mobility of about 0·86 cm2 V−1 s−1, the highest combined values for n-type microcrystalline silicon films, as far as we know.Keywords
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