Influence of die attachment on MOS transistor matching

1 May 1997

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Semiconductor Manufacturing

Vol. 10 (2) , 209-218
https://doi.org/10.1109/66.572070

Abstract

A test chip which allows the experimental study of the influence of die residual stresses on MOS transistor matching, in a standard 0.7 /spl mu/m CMOS technology, is described. The influence of eutectic die bonding on transistor matching is found to be a major degradation factor. Polyimide bonded dies do not significantly affect the matching performance of MOS transistors.

Keywords

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