Ion-implanted Ge transistor: Basic experiments

This publication has 14 references indexed in Scilit:

• Enhanced diffusion during the implantation of arsenic in silicon
  Applied Physics Letters, 1973
• Concentration Profiles of Arsenic Implanted in Silicon
  Published by Springer Nature ,1973
• Boron Doping Profiles and Annealing Behavior of Amorphous Implanted Silicon Layers
  Published by Springer Nature ,1973
• Effective chemical polishing of n-type GaP surfaces
  Physica Status Solidi (a), 1972
• Distribution of Boron Implanted Silicon
  Published by Springer Nature ,1971
• Electrical Properties of Ion Implanted Germanium
  Published by Springer Nature ,1971
• Technique used in Hall effect analysis of ion implanted Si and Ge
  Solid-State Electronics, 1970
• Diffusion effects in ion implanted germanium
  Radiation Effects, 1970
• LATTICE LOCATION OF DOPANT ELEMENTS IMPLANTED INTO Ge
  Applied Physics Letters, 1968
• Radiation damage and substitutional chemical impurity effects in single-crystal germanium bombarded with 40-keV B⁺, Al⁺, Ga⁺, Ge⁺, P⁺, As⁺, and Sb⁺ ions
  Canadian Journal of Physics, 1968