Characterization of GaAs and Si by a microwave photoconductance technique
- 1 September 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (5) , 1676-1680
- https://doi.org/10.1063/1.337257
Abstract
A nondestructive microwave photoconductance technique has been employed to investigate the uniformity of electrical transport properties in semi-insulating, doped, or implanted GaAs. Although the measurement time is increased, the technique is also applicable to Si. A review of the advantages and limitations is discussed and some example applications to a variety of GaAs and Si structures are presented.This publication has 8 references indexed in Scilit:
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