Non-destructive characterization of electrical uniformity in semi-insulating GaAs substrates by microwave photoconductance technique
- 1 November 1984
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 13 (6) , 931-948
- https://doi.org/10.1007/bf02655308
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Inhomogeneity of the deep center el2 in GaAs observed by direct infra-red imagingJournal of Electronic Materials, 1984
- New contactless method for lifetime measurement in semiconductor wafersReview of Scientific Instruments, 1983
- Contactless determination of the conductivity in semi-insulatorsPhysica Status Solidi (a), 1983
- Microwave contactless technique for photoconductivity measurementsSolar Cells, 1983
- Non-Destructive Determination of Cr Concentration Distribution in Cr Doped Semi-Insulating GaAs SubstratesJapanese Journal of Applied Physics, 1982
- Role of Dislocations in Semi-Insulation Mechanism in Undoped LEC GaAs CrystalJapanese Journal of Applied Physics, 1982
- Leakage Current IL Variation Correlated with Dislocation Density in Undoped, Semi-Insulating LEC-GaAsJapanese Journal of Applied Physics, 1982
- Inhomogeneity in Semi-Insulating GaAs Revealed by Scanning Leakage Current MeasurementsJapanese Journal of Applied Physics, 1982
- Dislocation density and sheet resistance variations across semi-insulating GaAs wafersIEEE Transactions on Electron Devices, 1982
- Characterization of Nonuniformity in Semi-Insulating LEC GaAs by Photoluminescence SpectroscopyJapanese Journal of Applied Physics, 1982