Laser Deposition of AlN Thin Films on InP and GaAs
- 1 October 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (10A) , L1750
- https://doi.org/10.1143/jjap.30.l1750
Abstract
Aluminium nitride thin films (∼1000 Å) were deposited by pulsed laser (ruby, 30 ns) evaporation on compound semiconductors GaAs and InP for fabrication of metal-insulator-semiconductor (MIS) diodes. The deposition was carried out with a laser energy density of 2.5 J·cm-2 at a rate of 10-11 Å/pulse at ∼10-6 Torr, the substrate temperature being 300 K. Low-angle X-ray diffraction showed the films to have a wurtzite structure. The resistivity of the films was 5×1012 Ω-cm with a breakdown field of 1-2×106 V-cm. The dielectric constant of the films was in the range of 7.5-7.8. A lower value of interface state density was obtained on InP (∼1.8×1011 cm-2·eV-1) rather than on GaAs (∼8×1011 cm-2·eV-1). These results are compared with earlier studies of laser-deposited BN films on InP.Keywords
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