Fabrication of ultrathin, highly uniform thin-film SOI MOSFETs with low series resistance using pattern-constrained epitaxy
- 1 July 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 44 (7) , 1131-1135
- https://doi.org/10.1109/16.595941
Abstract
We report a novel fabrication process for self-aligned, ultrathin, highly uniform thin-film SOI MOSFETs with low series resistance. Self-aligned, ultrathin SOI n-MOSFETs with 8 nm-50 nm undoped channel were fabricated. For n-MOSFETs with a 0.2 /spl mu/m effective channel length, a saturation transconductance of 242 mS/mm, and a low series resistance (R/sub s/d/=333 /spl Omega//spl middot//spl mu/m) were obtained.Keywords
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