Optical analysis of hot carrier distribution and transport properties in InP/AlInAs type II heterostructures

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Abstract
The authors report optical analysis of hot carrier distribution and transport properties in InP/AlInAs type II heterostructures under electric fields applied both normal and parallel to the heterointerface. They have observed photoluminescence which originates from the transition between electrons and holes spatially separated in the InP and AlInAs, respectively. An applied electric field across the heterointerface has significantly modulated the photoluminescence spectrum emitted from the interface. This effect can be interpreted from the field-dependent modulation of the carrier distributions near the interface in the staggered heterostructure. The hot electron velocity of 2D electrons in the heterostructures has been also discussed in experimental and theoretical aspects.