High electron mobility in modulation-doped n-AlInAs/InP heterostructures grown by low pressure organometallic vapor phase epitaxy

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Abstract
We report high electron mobility in modulation‐doped n‐AlInAs/InP heterostructures. The electron mobility in these heterostructures was observed to be 48 500 cm2/V s with electron concentration of 8.1×1011/cm2 at 50 K. Shubnikov–de Hass measurement clearly shows the existence of two dimensional electron gas in this heterostructure. We also observed small light sensitivity and no persistent photoconductivity in this heterostructure, both of which are due to an AlInAs layer which is free of DX centers in an AlInAs and high quality heterointerface grown by low pressure organometallic vapor phase epitaxy.