Accumulation of Radiation Defects in Oxygen-Rich n-Type Silicon Heat-Treated at Temperatures from 600 to 1000 °C
- 16 July 1986
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 96 (1) , 129-134
- https://doi.org/10.1002/pssa.2210960115
Abstract
No abstract availableKeywords
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